fdp032n08 n-chan nel powertrench ? mosfet ?2012 fairchild semiconductor corporation fdp032n08 rev. c0 www.fairchildsemi.com 1 september 2012 fdp032n08 n-channel powertrench ? mosfet 75v, 235a, 3.2m features ?r ds(on) = 2.5m ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s adcanced powertrench ? process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification d g s to-220 g s d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp032n08 units v dss drain to source voltage 75 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) - continuous (t c = 100 o c, silicon limited) - continuous (t c = 25 o c, package limited) 235* a 165* a 120 a i dm d r a i n c u r r e n t - p u l s e d (note 1) 940 a e as single pulsed avalanche energy (note 2) 1995 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 375 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp032n08 units r jc thermal resistance, junction to case 0.4 o c/w r cs thermal resistance, case to sink typ. 0.5 r ja thermal resistance, junction to ambient 62.5 * calculated continuous current based on maximum allowable ju nction temperature. package limitation current is 120a.
fdp032n08 n-chan nel powertrench ? mosfet fdp032n08 rev. c0 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp032n08 fdp032n08 to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c75 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.05 - v/ o c i dss zero gate voltage drain current v ds = 75v, v gs = 0v - - 1 a v ds = 75v, t c = 150 o c--500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.5 3.5 4.5 v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 2.5 3.2 m g fs forward transconductance v ds = 10v, i d = 75a - 180 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 11400 15160 pf c oss output capacitance - 1360 1810 pf c rss reverse transfer capacitance - 595 800 pf q g(tot) total gate charge at 10v v ds = 60v, i d = 75a v gs = 10v (note 4) - 169 220 nc q gs gate to source gate charge - 60 - nc q gd gate to drain ?miller? charge - 47 - nc t d(on) turn-on delay time v dd = 37.5v, i d = 75a r gen = 25 , v gs = 10v (note 4) - 230 470 ns t r turn-on rise time - 191 392 ns t d(off) turn-off delay time - 335 680 ns t f turn-off fall time - 121 252 ns i s maximum continuous drain to source diode forward current - - 235 a i sm maximum pulsed drain to source diode forward current - - 940 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s -53-ns q rr reverse recovery charge - 77 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.71mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
fdp032n08 n-chan nel powertrench ? mosfet fdp032n08 rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.01 0.1 1 0.1 1 10 100 1000 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d ,drain current[a] v ds ,drain-source voltage[v] 3000 2468 1 10 100 -55 o c 175 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 500 0.0 0.5 1.0 1.5 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 400 0 100 200 300 400 0.0020 0.0025 0.0030 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0 50 100 150 200 0 2 4 6 8 10 *note: i d = 75a v ds = 15v v ds = 37.5v v ds = 60v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 80
fdp032n08 n-chan nel powertrench ? mosfet fdp032n08 rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. vs. temperature temperature figure 9. maximum safe operating area figure 10. maximum drain current v s . c a s e t e m p e r a t u r e figure 11 . transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 50 100 150 200 250 limited by package i d , drain current [a] t c , case temperature [ o c] 0.1 1 10 100 0.1 1 10 100 1000 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 0.40 o c/w dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.001 0.01 0.1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 0.5 t 1 p dm t 2
fdp032n08 n-chan nel powertrench ? mosfet fdp032n08 rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp032n08 n-chan nel powertrench ? mosfet fdp032n08 rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdp032n08 n-chan nel powertrench ? mosfet fdp032n08 rev. c0 www.fairchildsemi.com 7 package dimensions dimensions in millimeters to-220
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